Contact Information
Company Name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Company Location:
#506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Factory Location:
26-32#, Liamei Rd. Lianhua Industrial Area, Tong an, Xiamen 361100, China
Employee Number:
50~100
Business Type:
Manufacturer Exporter Seller
Brands:
POWERWAY
Website:
http://www.ganwafer.com/
(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density
A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate
10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished
(11-22) Plane U-GaN Freestanding Gallium Nitride(GaN) Crystal Substrate
(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices
Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes
10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power
2 Inch Semi-Insulating GaN Wafer On Sapphire Substrates By MOCVD
2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure
4 Inch Freestanding GaN Substrates As III-Nitride Semiconductor Materials
6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
C(0001) 6H N Type SiC Wafer, Research Grade,Epi Ready, 2”Sizes
On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size
6H N Type SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier
4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size
