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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / GaN Wafer / (20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density /

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GaN Wafer

 [37]

SiC Wafer

 [44]

GaAs Wafer

 [23]

InP Wafer

 [21]

InAs Wafer

 [19]

InSb Wafer

 [13]

GaSb Wafer

 [19]

Germanium Wafer

 [15]

CdZnTe Wafer

 [1]

Silicon Wafer

 [65]

Glass Wafer

 [1]
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density
(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density
  • (20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density
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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density PAM-XIAMEN has established the manufacturing technology for freestanding ...
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Product Tags:
gan semiconductor pcb hole size gaas substrate

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