XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs
PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.
Here shows detail specification:
10*10mm2 Si-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN-50-SI |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | C plane (0001) off angle toward M-axis 0.35 ±0.15° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 106 Ω.cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 105 to 5x 106 cm-2 (calculated by CL)* |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
|
Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
10*10mm2 Si-GaN Freestanding GaN Substrate
The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.
Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride (or GaN) is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.
Surface Roughness-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
Surface roughness is usually shortened to roughness and is a component of surface texture. It is quantified by the deviation of the normal vector direction of the real surface from its ideal form. If these deviations are large, the surface is rough; If they’re small, the surface is smooth. In surface measurement, roughness is generally considered to be the high frequency short-wave length component of measuring scale surface. In practice, however, it is often necessary to know the amplitude and frequency to ensure that the surface is suitable for a purpose.
Below is an example of surface roughness of GaN material:
A surface roughness-gan