XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Manufacturer from China
Active Member
6 Years
Home / Products / GaN Wafer / Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs) /

show pictures

Contact Now
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
Contact Now

Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs)

Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs)
  • Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs)
Products Detailed
Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs) PAM-XIAMEN has established the manufacturing technology for ...
View Products Detailed →