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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / GaN Wafer / 4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes /

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GaN Wafer

 [36]

SiC Wafer

 [44]

GaAs Wafer

 [20]

InP Wafer

 [21]

InAs Wafer

 [16]

InSb Wafer

 [11]

GaSb Wafer

 [16]

Germanium Wafer

 [15]

CdZnTe Wafer

 [1]

Silicon Wafer

 [65]

Glass Wafer

 [1]
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes
4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes
  • 4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes
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4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes PAM-XIAMEN’s Template Products consist of crystalline layers of gallium ...
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