XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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On-Axis Or 4deg.Off 4H N Type Sic Wafer Material ,Production Grade,10mm x 10mm
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC Wafer, Production Grade,10mm x 10mm
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 | |
| Description | Production Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (50.8 ± 0.38) mm | |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | 0.012 – 0.0028 Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | <30 arcsec <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° | |
| Primary flat length | 16.00 ± 1.70) mm | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | 8.00 ± 1.70 mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Usable area | ≥ 90 % | |
| Edge exclusion | 1 mm | |
Single crystal SiC Properties
Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.
Property of Silicon Carbide (SiC)
Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:
| Property | Value | Conditions |
| Density | 3217 kg/m^3 | hexagonal |
| Density | 3210 kg/m^3 | cubic |
| Density | 3200 kg/m^3 | Single crystal |
| Hardness,Knoop(KH) | 2960 kg/mm/mm | 100g,Ceramic,black |
| Hardness,Knoop(KH) | 2745 kg/mm/mm | 100g,Ceramic,green |
| Hardness,Knoop(KH) | 2480 kg/mm/mm | Single crystal. |
| Young's Modulus | 700 GPa | Single crystal. |
| Young's Modulus | 410.47 GPa | Ceramic,density=3120 kg/m/m/m, at room temperature |
| Young's Modulus | 401.38 GPa | Ceramic,density=3128 kg/m/m/m, at room temperature |
| Thermal conductivity | 350 W/m/K | Single crystal. |
| Yield strength | 21 GPa | Single crystal. |
| Heat capacity | 1.46 J/mol/K | Ceramic,at temp=1550 C. |
| Heat capacity | 1.38 J/mol/K | Ceramic,at temp=1350 C. |
| Heat capacity | 1.34 J/mol/K | Ceramic,at temp=1200 C. |
| Heat capacity | 1.25 J/mol/K | Ceramic,at temp=1000 C. |
| Heat capacity | 1.13 J/mol/K | Ceramic,at temp=700 C. |
| Heat capacity | 1.09 J/mol/K | Ceramic,at temp=540 C. |
| Electrical resistivity | 1 .. 1e+10 Ω*m | Ceramic,at temp=20 C |
| Compressive strength | 0.5655 .. 1.3793 GPa | Ceramic,at temp=25 C |
| Modulus of Rupture | 0.2897 GPa | Ceramic,with 1 wt% B addictive |
| Modulus of Rupture | 0.1862 GPa | Ceramifc,at room temperature |
| Poisson's Ratio | 0.183 .. 0.192 | Ceramic,at room temperature,density=3128 kg/m/m/m |
| Modulus of Rupture | 0.1724 GPa | Ceramic,at temp=1300 C |
| Modulus of Rupture | 0.1034 GPa | Ceramic,at temp=1800 C |
| Modulus of Rupture | 0.07586 GPa | Ceramic,at temp=1400 C |
| Tensile strength | 0.03448 .. 0.1379 GPa | Ceramic,at temp=25 C |
* Reference:CRC Materials Science and Engineering Handbook
Comparision of Property of single crystal SiC, 6H and 4H:
| Property | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
* Reference:Xiamen Powerway Advanced Material Co.,Ltd.
Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:
| Si-C Polytype | 3C-SiC | 4H-SiC | 6H-SiC |
| Crystal structure | Zinc blende (cubic) | Wurtzite ( Hexagonal) | Wurtzite ( Hexagonal) |
| Group of symmetry | T2d-F43m | C46v-P63mc | C46v-P63mc |
| Bulk modulus | 2.5 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 |
| Linear thermal expansion coefficient | 2.77 (42) x 10-6 K-1 | ||
| Debye temperature | 1200 K | 1300 K | 1200 K |
| Melting point | 3103 (40) K | 3103 ± 40 K | 3103 ± 40 K |
| Density | 3.166 g cm-3 | 3.21 g cm-3 | 3.211 g cm-3 |
| Hardness | 9.2-9.3 | 9.2-9.3 | 9.2-9.3 |
| Surface microhardness | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 |
| Dielectric constant (static) | ε0 ~= 9.72 | The value of 6H-SiC dielectric constant is usually used | ε0,ort ~= 9.66 |
| Infrared refractive index | ~=2.55 | ~=2.55 (c axis) | ~=2.55 (c axis) |
| Refractive index n(λ) | n(λ)~= 2.55378 + 3.417 x 104·λ-2 | n0(λ)~= 2.5610 + 3.4 x 104·λ-2 | n0(λ)~= 2.55531 + 3.34 x 104·λ-2 |
| ne(λ)~= 2.6041 + 3.75 x 104·λ-2 | ne(λ)~= 2.5852 + 3.68 x 104·λ-2 | ||
| Radiative recombination coefficient | 1.5 x 10-12 cm3/s | 1.5 x 10-12 cm3/s | |
| Optical photon energy | 102.8 meV | 104.2 meV | 104.2 meV |
| Effective electron mass (longitudinal)ml | 0.68mo | 0.677(15)mo | 0.29mo |
| Effective electron mass (transverse)mt | 0.25mo | 0.247(11)mo | 0.42mo |
| Effective mass of density of states mcd | 0.72mo | 0.77mo | 2.34mo |
| Effective mass of the density of states in one valley of conduction band mc | 0.35mo | 0.37mo | 0.71mo |
| Effective mass of conductivity mcc | 0.32mo | 0.36mo | 0.57mo |
| Effective hall mass of density of state mv? | 0.6 mo | ~1.0 mo | ~1.0 mo |
| Lattice constant | a=4.3596 A | a = 3.0730 A | a = 3.0730 A |
| b = 10.053 | b = 10.053 |
* Reference: IOFFE
SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim
Electrical Breakdown
The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that can lead to aspark jumping around or through the insulator. This may be a momentary event (as in an electrostatic discharge), or may lead to a continuousarc discharge if protective devices fail to interrupt the current in a high power circuit.
There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices