XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Semi-Insulating , Gallium Arsenide Substrate With CMP Polished , 4”, Prime Grade
PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 4, inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
Properties of GaAs Crystal
| Properties | GaAs |
| Atoms/cm3 | 4.42 x 1022 |
| Atomic Weight | 144.63 |
| Breakdown Field | approx. 4 x 105 |
| Crystal Structure | Zincblende |
| Density (g/cm3) | 5.32 |
| Dielectric Constant | 13.1 |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 |
| Electron Affinity (V) | 4.07 |
| Energy Gap at 300K (eV) | 1.424 |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 |
| Intrinsic Debye Length (microns) | 2250 |
| Intrinsic Resistivity (ohm-cm) | 108 |
| Lattice Constant (angstroms) | 5.6533 |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 |
| ΔL/L/ΔT (1/deg C) | |
| Melting Point (deg C) | 1238 |
| Minority Carrier Lifetime (s) | approx. 10-8 |
| Mobility (Drift) | 8500 |
| (cm2/V-s) | |
| µn, electrons | |
| Mobility (Drift) | 400 |
| (cm2/V-s) | |
| µp, holes | |
| Optical Phonon Energy (eV) | 0.035 |
| Phonon Mean Free Path (angstroms) | 58 |
| Specific Heat | 0.35 |
| (J/g-deg C) | |
| Thermal Conductivity at 300 K | 0.46 |
| (W/cm-degC) | |
| Thermal Diffusivity (cm2/sec) | 0.24 |
| Vapor Pressure (Pa) | 100 at 1050 deg C; |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) | |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |