XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

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Brand Name :PAM-XIAMEN
Place of Origin :China
MOQ :1-10,000pcs
Payment Terms :T/T
Supply Ability :10,000 wafers/month
Delivery Time :5-50 working days
Packaging Details :Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :gallium arsenide Gaas Wafer
Wafer Diamter :3″
Thickness :350~675um
Grade :Prime Grade
usage :Microelectronics Application
keyword :GaAs Crystal wafer
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Semi-Insulating , GaAs Wafer With Low Defect Density , 3”, Prime Grade

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diamter 3, inch Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is a GaAs Test Wafer?

Most GaAs test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

What is the Basic Parameters at 300 K of GaAs Wafer?

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 4.42·1022
de Broglie electron wavelength 240 A
Debye temperature 360 K
Density 5.32 g cm-3
Dielectric constant (static ) 12.9
Dielectric constant (high frequency) 10.89
Effective electron mass me 0.063mo
Effective hole masses mh 0.51mo
Effective hole masses mlp 0.082mo
Electron affinity 4.07 eV
Lattice constant 5.65325 A
Optical phonon energy 0.035 eV

Are You Looking for GaAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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