XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | SC/p-type with Zn dope Available |
| Growth Method | VGF | |
| Dopant | Silicon | Zn available |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut availalbe |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec | |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~450um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15°off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Semi-insulating | |
| Grow Method | VGF | |
| Dopant | Undoped | |
| Type | N | |
| Diamater(mm) | 150±0.25 | |
| Orientation | (100)0°±3.0° | |
| NOTCH Orientation | 〔010〕±2° | |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | |
| Carrier Concentration | N/A | |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 | |
| Mobility(cm2/v.s) | N/A | |
| Dislocation | N/A | |
| Thickness(µm) | 675±25 | |
| Edge Exclusion for Bow and Warp(mm) | N/A | |
| Bow(µm) | N/A | |
| Warp(µm) | ≤20.0 | |
| TTV(µm) | ≤10.0 | |
| TIR(µm) | ≤10.0 | |
| LFPD(µm) | N/A | |
| Polishing | P/P Epi-Ready |
2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
| Diamater(mm) | Ф 50.8mm ± 1mm | |
| Thickness | 1-2um or 2-3um | |
| Marco Defect Density | ≤ 5 cm-2 | |
| Resistivity(300K) | >108 Ohm-cm | |
| Carrier | ＜0.5ps | |
| Dislocation Density | <1x106cm-2 | |
| Useable Surface Area | ≥80% | |
| Polishing | Single side polished | |
| Substrate | GaAs Substrate |
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | SC/p-type with Zn dope Available |
| Growth Method | VGF | |
| Dopant | Silicon | Zn available |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut availalbe |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec | |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~450um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Semi-insulating | |
| Grow Method | VGF | |
| Dopant | Undoped | |
| Type | N | |
| Diamater(mm) | 150±0.25 | |
| Orientation | (100)0°±3.0° | |
| NOTCH Orientation | 〔010〕±2° | |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | |
| Carrier Concentration | N/A | |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 | |
| Mobility(cm2/v.s) | N/A | |
| Dislocation | N/A | |
| Thickness(µm) | 675±25 | |
| Edge Exclusion for Bow and Warp(mm) | N/A | |
| Bow(µm) | N/A | |
| Warp(µm) | ≤20.0 | |
| TTV(µm) | ≤10.0 | |
| TIR(µm) | ≤10.0 | |
| LFPD(µm) | N/A | |
| Polishing | P/P Epi-Ready |
2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
| Diamater(mm) | Ф 50.8mm ± 1mm | |
| Thickness | 1-2um or 2-3um | |
| Marco Defect Density | ≤ 5 cm-2 | |
| Resistivity(300K) | >108 Ohm-cm | |
| Carrier | ＜0.5ps | |
| Dislocation Density | <1x106cm-2 | |
| Useable Surface Area | ≥80% | |
| Polishing | Single side polished | |
| Substrate | GaAs Substrate |
