XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Undoped InAs Substrate , 2”, Prime Grade , Epi Ready -InAs Wafer Manufacturer
PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, mechanical grade,test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offers materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
2" InAs Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | N-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | 5x1016cm-3 |
| Mobility | ≥2x104cm2/V.s |
| EPD | <5x104cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
Basic Parameters at 300 K of InAs Wafer?
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 3.59·1022 |
| de Broglie electron wavelength | 400 A |
| Debye temperature | 280 K |
| Density | 5.68 g cm-3 |
| Dielectric constant (static) | 15.15 |
| Dielectric constant (high frequency) | 12.3 |
| Effective electron mass | 0.023mo |
| Effective hole masses mh | 0.41mo |
| Effective hole masses mlp | 0.026mo |
| Electron affinity | 4.9 eV |
| Lattice constant | 6.0583 A |
| Optical phonon energy | 0.030 eV |
Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!