XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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N Type , Indium Arsenide Wafer , 4”, Prime Grade -Powerway Wafer
PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode lasers in lower noise or higher-power applications at room temperature. in diameter up to 4 inch. Indium Arsenide ( InAs ) crystal is formed by two elements , Indium and Arsenide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs wafer is is similar to gallium arsenide and is a direct bandgap material.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
4" InAs Wafer Specification
| Item | Specifications | |
| Dopant | Stannum | Sulphur |
| Conduction Type | N-type | N-type |
| Wafer Diameter | 4" | |
| Wafer Orientation | (100)±0.5° | |
| Wafer Thickness | 900±25um | |
| Primary Flat Length | 16±2mm | |
| Secondary Flat Length | 8±1mm | |
| Carrier Concentration | (5-20)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | 7000-20000cm2/V.s | 6000-20000cm2/V.s |
| EPD | <5x104cm-2 | <3x104cm-2 |
| TTV | <15um | |
| BOW | <15um | |
| WARP | <20um | |
| Laser marking | upon request | |
| Suface finish | P/E, P/P | |
| Epi ready | yes | |
| Package | Single wafer container or cassette | |
What is a InAs test Wafer?
Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.
| Bulk modulus | 5.8·1011 dyn cm-2 |
| Melting point | 942 °C |
| Specific heat | 0.25 J g-1 °C-1 |
| Thermal conductivity | 0.27 W cm-1 °C-1 |
| Thermal diffusivity | 0.19 cm2s-1 |
| Thermal expansion, linear | 4.52·10-6 °C-1 |
 | Temperature dependence of thermal conductivity. |
| Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016. |
| Temperature dependence of specific heat at constant pressure |
For 298K < T < 1215K
Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).
| Temperature dependence of linear expansion coefficient (low temperature) |
| Temperature dependence of linear expansion coefficient (high temperature) |
| Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019. |
Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):
for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!