XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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N Type, InAs Wafer, 2”,Prime Grade,Epi Ready-Semiconductor Wafer Manufacturing
PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, mechanical grade,test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offers materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
2" InAs Wafer Specification
| Item | Specifications | ||
| Dopant | Stannum | Sulphur | |
| Conduction Type | N-type | N-type | |
| Wafer Diameter | 2" | ||
| Wafer Orientation | (100)±0.5° | ||
| Wafer Thickness | 500±25um | ||
| Primary Flat Length | 16±2mm | ||
| Secondary Flat Length | 8±1mm | ||
| Carrier Concentration | (5-20)x1017cm-3 | (1-10)x1017cm-3 | |
| Mobility | 7000-20000cm2/V.s | 6000-20000cm2/V.s | |
| EPD | <5x104cm-2 | <3x104cm-2 | |
| TTV | <10um | ||
| BOW | <10um | ||
| WARP | <12um | ||
| Laser marking | upon request | ||
| Suface finish | P/E, P/P | ||
| Epi ready | yes | ||
| Package | Single wafer container or cassette | ||
What is InAs wafer?
Indium arsenide is a kind of III-V compound semiconductor material composed of indium and arsenic.It is a silver gray solid with a sphalerite crystal structure at room temperature. The lattice constant is 0.6058nm, and the density is 5.66g/cm (solid) and 5.90g/cm (liquid at melting point). The band structure is a direct transition with a band gap (300K) of 0.45ev. the dissociation pressure of as is only 0.033mpa, and the single crystal can be grown from the melt at atmospheric pressure. The commonly used methods are Hb and LEC. InAs is a kind of semiconductor material which is difficult to purify. The residual carrier concentration is higher than l × 10 / cm, the room temperature electron mobility is 3.3 × 10 ^ 3cm / (V · s), and the hole mobility is 460cm / (V · s). The effective segregation coefficient of sulfur in In and As is close to 1, so it is used as n-type dopant to improve the uniformity of longitudinal carrier concentration distribution. For industrial InAs (s) single crystal, n ≥ 1 × 10 / cm3, μ ≤ 2.0 × 10cm / (V · s), EPD ≤ 5 × 10 / cm3.
InAs crystal has high electron mobility and mobility ratio (μ E / μ H = 70), low magneto resistance effect and low resistance temperature coefficient. It is an ideal material for manufacturing Hall devices and magneto resistance devices. The emission wavelength of InAs is 3.34 μ M. in GaAs B, InAsPSb and inasb multiple epitaxial materials with lattice matching can be grown on InAs substrate. Lasers and detectors for optical fiber communication at 2-4 μ M band can be manufactured.
Basic Parameters at 300 K of InAs Wafer?
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 3.59·1022 |
| de Broglie electron wavelength | 400 A |
| Debye temperature | 280 K |
| Density | 5.68 g cm-3 |
| Dielectric constant (static) | 15.15 |
| Dielectric constant (high frequency) | 12.3 |
| Effective electron mass | 0.023mo |
| Effective hole masses mh | 0.41mo |
| Effective hole masses mlp | 0.026mo |
| Electron affinity | 4.9 eV |
| Lattice constant | 6.0583 A |
| Optical phonon energy | 0.030 eV |
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!