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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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China Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer wholesale
  • China Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer wholesale

Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer
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Brand Name :PAM-XIAMEN
Place of Origin :China
MOQ :1-10,000pcs
Price :By Case
Payment Terms :T/T
Supply Ability :10,000 wafers/month
Delivery Time :5-50 working days
product name :Gallium Antimonide Wafer
Conduction Type :P type
Dopant :Undoped
Wafer Thickness :600±25um
other name :GaSb Mechanical Wafer
Wafer Diameter :3"
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Undoped Gallium Antimonide Wafer, 3”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.


3" GaSb Wafer Specification

Item Specifications
Conduction Type P-type
Dopant Undoped
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-2)x1017cm-3
Mobility 600-700cm2/V.s
EPD <2x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Optical properties of GaSb Wafer

Index of refraction 3.8
Radiative recombination coefficient ~ 10-10 cm3s-1

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Refractive index n versus photon energy, 300 K
Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Reflectivity versus photon energy, 300 K
Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples.
T(K): 1. 300, 2. 77, 3. 4.2
Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Intrinsic absorption edge in p-type GaSb.
Na = 3·1019 cm-3;
T(K): 1. 215; 2. 140; 3. 77
Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Intrinsic absorption edge at 77 K for different doping levels, p-GaSb.
Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer The absorption coefficient versus photon energy, T=300 K
Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer The impurity absorption at low photon energies, T=80 K
Undoped sample (p = 2.4·1017 cm-3 at 300 K)
Te added (p = 7.5·1016 cm-3)
Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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precision ceramic processing alumina

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