XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Optical Grade Mono Crystalline Germanium Substrate
PAM-XIAMEN offers Germanium wafer Single Crystals and Wafers grown by VGF / LEC, we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch. Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium requirement.
General Properties Of Germanium Wafer
| General Properties Structure | Cubic, a = 5.6754 Å | ||
| Density: 5.765 g/cm3 | |||
| Melting Point: 937.4 oC | |||
| Thermal Conductivity: 640 | |||
| Crystal Growth Technology | Czochralski | ||
| Doping available | Undoped | Sb Doping | Doping In or Ga |
| Conductive Type | / | N | P |
| Resistivity, ohm.cm | >35 | < 0.05 | 0.05 – 0.1 |
| EPD | < 5×103/cm2 | < 5×103/cm2 | < 5×103/cm2 |
| < 5×102/cm2 | < 5×102/cm2 | < 5×102/cm2 | |
Specification Of Germanium Wafer
| Item | Specifications | Remarks |
| Growth Method | VGF | |
| Conduction Type | n-type, undoped | |
| Dopant | Antimony,NONE | |
| Wafer Diamter | 2, 3,4 & 6 | inch |
| Crystal Orientation | (100),(111),(110) | |
| Thickness | 200~550 | um |
| OF | EJ or US | |
| Carrier Concentration | request upon customers | |
| Resistivity at RT | (0.001~80) | Ohm.cm |
| Etch Pit Density | <5000 | /cm2 |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Epi ready | Yes | |
| Package | Single wafer container or cassette |
Transmission Of Optical Grade Germanium Wafer
Specification of Germanium
1. Transmission Range: 1.8-23 um
2. Refractive Index©10.6 um: 4.0034
3. Purity: 99.999%
4. Melting Point: 936 °C
5. Hardness: 780 kg/mm2
6. Density: 5.327 gm/cc
Of course, germanium is an active ingredient in semiconductors and wafers as well as the other things we mentioned above. If you are in need of germanium wafers, contact us today.
in the infrared industry, specifically in infrared spectroscopes and infrared detectors.
Germanium was predicted by Russian chemist Dmitri Mendeleev in 1869 after he developed the periodic table of elements. He predicted the element because he noticed a gap between silicon and tin. As a result, he theorized that there were several elements yet to be discovered, including element number 32 (Germanium). When he first figured it out, he initially called it eka-silicon.
His prediction turned out to be pretty accurate. He predicted that the element that would eventually become Germanium would have a density of 5.5 grams per cubic centimeter and atomic weight of 70. The actual numbers are 5.323 grams per cubic centimeter and an atomic weight of 72.630. As a result of his accuracy with Germanium, the periodic table was given credibility.
The element was officially discovered by Clemens A. Winkler in 1886 in Germany. The discovery was made in a mineral sample from a silver mine. The name he gave it, Germanium, comes from the Latin ‘Germania’ meaning Germany.
Germanium is a metalloid. A metalloid is an element that has characteristics of both metals and non-metals. When it comes to the world of wafers, germanium is a popular material used in production. Let’s take a look at some important things you need to know about the germanium wafer.
PAM-XIAMEN offer germanium wafers. No matter what the project or use is, we have germanium wafers available at competitive prices. Enquire us today to learn more about how we can help you with all your wafer needs.