XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Undoped Germanium Wafer With Low Etch Pit Density, Epi-Ready , 6”
PAM-XIAMEN is a worldwide manufacturer of single crystal Germanium wafer ( Ge wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch . Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium needs. Germanium wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room environment , with a good quality control system , PAM-XIAMEN is dedicated to providing clean and high quality Germanium wafer products. PAM-XIAMEN can offer both electronics grade and IR grade Ge wafer, please contact us for more Ge product information
Properties Of Germanium Substrate/Window
| Thermal properties: | |
| Thermal Expansion | 5.9 x 10-6 °C -1 @ 300K |
| Melting Point | 937°C |
| Thermal diffusivity | 0.36 cm2s-1 |
| Thermal conductivity | 0.58 W cm-1 °C-1 |
| Specific heat | 0.31 J g-1 °C-1 |
| Mechanical properties: | |
| Young Modulus | 10.3x1011 dyn cm-2 @ 300K |
| Shear Modulus | 4.1x 1011 dyn cm-2 |
| Knoop Hardness | 780 kg mm-2 |
| Poisson constant | 0.26 |
| Electrical properties: | |
| Di-electric constant | 16.2 |
| Resisitivity | 9.0 ohm cm |
| Optical properties: | |
| Transmission | 2 - 14μm fino a circa 45° |
| Refractive Index | 4.025 @ 4μm |
| 4.005 @ 10μm | |
Specification of Germanium Wafer
| Item | Specifications | Remarks |
| Growth Method | VGF | |
| Conduction Type | undoped | |
| Dopant | NONE | |
| Wafer Diamter | 6 | inch |
| Crystal Orientation | (100),(111),(110) | |
| Thickness | 200~550 | um |
| OF | EJ or US | |
| Carrier Concentration | request upon customers | |
| Resistivity at RT | (0.001~80) | Ohm.cm |
| Etch Pit Density | <5000 | /cm2 |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Epi ready | Yes | |
| Package | Single wafer container or cassette |
Of course, germanium is an active ingredient in semiconductors and wafers as well as the other things we mentioned above. If you are in need of germanium wafers, contact us today.
in the infrared industry, specifically in infrared spectroscopes and infrared detectors.
Germanium was predicted by Russian chemist Dmitri Mendeleev in 1869 after he developed the periodic table of elements. He predicted the element because he noticed a gap between silicon and tin. As a result, he theorized that there were several elements yet to be discovered, including element number 32 (Germanium). When he first figured it out, he initially called it eka-silicon.
His prediction turned out to be pretty accurate. He predicted that the element that would eventually become Germanium would have a density of 5.5 grams per cubic centimeter and atomic weight of 70. The actual numbers are 5.323 grams per cubic centimeter and an atomic weight of 72.630. As a result of his accuracy with Germanium, the periodic table was given credibility.
The element was officially discovered by Clemens A. Winkler in 1886 in Germany. The discovery was made in a mineral sample from a silver mine. The name he gave it, Germanium, comes from the Latin ‘Germania’ meaning Germany.
Germanium is a metalloid. A metalloid is an element that has characteristics of both metals and non-metals. When it comes to the world of wafers, germanium is a popular material used in production. Let’s take a look at some important things you need to know about the germanium wafer.
No matter the project or usage, we feature some of good quality germanium in our germanium wafers. Enquiry today to learn more about how we can get you germanium wafers for your next project.