XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Undoped Ge Substrate By CZ, 3”, Polished Wafer -Powerway Wafer

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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Undoped Ge Substrate By CZ, 3”, Polished Wafer -Powerway Wafer

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Brand Name :PAM-XIAMEN
Place of Origin :China
MOQ :1-10,000pcs
Payment Terms :T/T
Supply Ability :10,000 wafers/month
Delivery Time :5-50 working days
Packaging Details :Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :single crystal Germanium wafer
Wafer Diamter :3 inch
Conduction Type :undoped
Thickness :200~550um
Epi ready :Yes
Package :Single wafer container or cassette
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Undoped Ge Substrate By CZ, 3”, Polished Wafer -Powerway Wafer

PAM-XIAMEN is a worldwide manufacturer of single crystal Germanium wafer ( Ge wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch . Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium needs. Germanium wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room environment , with a good quality control system , PAM-XIAMEN is dedicated to providing clean and high quality Germanium wafer products. PAM-XIAMEN can offer both electronics grade and IR grade Ge wafer, please contact us for more Ge product information

Grades And Application Of Germanium Wafer

Electronic Grade Used for diodes and transistors,
Infrared or opitical Grade Used for IR optical window or disks,opitical components
Cell Grade Used for substrates of solar cell

Specification of Germanium Wafer

Item Specifications Remarks
Growth Method VGF
Conduction Type undoped
Dopant NONE
Wafer Diamter 3 inch
Crystal Orientation (100),(111),(110)
Thickness 200~550 um
OF EJ or US
Carrier Concentration request upon customers
Resistivity at RT (0.001~80) Ohm.cm
Etch Pit Density <5000 /cm2
Laser Marking upon request
Surface Finish P/E or P/P
Epi ready Yes
Package Single wafer container or cassette

What Is The Germanium Wafer Production Process?

The process of transforming an element into thin wafers with a damage free, mirror-like, clean surface is no easy task. It requires a series of steps. Here are the 5 steps in the germanium wafer production process:

1) Highly pure germanium is attained during zone refining.

2) The Czochralski process transforms the element into a germanium crystal.

3) The crystal is manufactured into a wafer through the process of cutting, grinding and etching.

4) The Ge wafers are cleaned and inspected. This step requires the wafers to be polished on either one or both sides, depending on the customers needs.

5) The high-quality wafers are packed under a nitrogen atmosphere in single wafer containers.

Are You Looking for Ge Wafer?

No matter the project or usage, we feature some of good quality germanium in our germanium wafers. Enquiry today to learn more about how we can get you germanium wafers for your next project.

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