XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Undoped Germanium Wafer With EPD, 2”-Powerway Wafer

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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Undoped Germanium Wafer With EPD, 2”-Powerway Wafer

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Brand Name :PAM-XIAMEN
Place of Origin :China
MOQ :1-10,000pcs
Payment Terms :T/T
Supply Ability :10,000 wafers/month
Delivery Time :5-50 working days
Packaging Details :Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :Undoped Germanium Wafer
Wafer Diamter :2 inch
Conduction Type :undoped
Thickness :200~550um
Epi ready :Yes
Package :Single wafer container or cassette
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Undoped Germanium Wafer With EPD, 2”-Powerway Wafer

PAM-XIAMEN offers Germanium wafer Single Crystals and Wafers grown by VGF / LEC, we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch. Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium requirement.

General Properties Of Germanium Wafer

General Properties Structure Cubic, a = 5.6754 Å
Density: 5.765 g/cm3
Melting Point: 937.4 oC
Thermal Conductivity: 640
Crystal Growth Technology Czochralski
Doping available Undoped Sb Doping Doping In or Ga
Conductive Type / N P
Resistivity, ohm.cm >35 < 0.05 0.05 – 0.1
EPD < 5×103/cm2 < 5×103/cm2 < 5×103/cm2
< 5×102/cm2 < 5×102/cm2 < 5×102/cm2

Specification of Germanium Wafer

Item Specifications Remarks
Growth Method VGF
Conduction Type undoped
Dopant NONE
Wafer Diamter 2 inch
Crystal Orientation (100),(111),(110)
Thickness 200~550 um
OF EJ or US
Carrier Concentration request upon customers
Resistivity at RT (0.001~80) Ohm.cm
Etch Pit Density <5000 /cm2
Laser Marking upon request
Surface Finish P/E or P/P
Epi ready Yes
Package Single wafer container or cassette

Germanium Wafer Process

In the germanium wafer production process, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.

1) High purity germanium is obtained during zone refining.

2) A germanium crystal is produced via the Czochralski process.

3) The germanium wafer is manufactured via several cutting, grinding, and etching steps.

4) The wafers are cleaned and inspection. During this process, the wafers are single side polished or double side polished according to custom requirement, epi-ready wafer comes.

5) The wafers are packed in single wafer containers, under a nitrogen atmosphere.

Application:

Germanium blank or window are used in night vision and thermographic imaging solutions for commercial security, fire fighting and industrial monitoring equipment. Also, they are used as filters for analytical and measuring equipment, windows for remote temperature measurement, and mirrors for lasers.

Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems

Are You Looking for Germanium Wafers?

PAM-XIAMEN offer germanium wafers. No matter what the project or use is, we have germanium wafers available at competitive prices. Enquire us today to learn more about how we can help you with all your wafer needs.

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