XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, metallization on silicon substrate, and epi wafer service.
3inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"
| Type | Conduction Type | Orientation | Diameter(mm) | Resistivity(Ω•cm) |
| High resistance | N&P | <100>&<111> | 50 - 300 | >1000 |
| NTD | N | <100>&<111> | 50 - 300 | 30-800 |
| CFZ | N&P | <100>&<111> | 50 - 300 | 1-50 |
| GD | N&P | <100>&<111> | 50 - 300 | 0.001-300 |
| Parameter | Unit | Value |
| Crystalline structure | - | Monocrystalline |
| Growth technique | - | FZ |
| Crystal Orientation | - | 111 |
| Conductance type | - | P |
| Dopant | - | Boron |
| Diameter | mm | 76.2 |
| Resistivity | Ω/cm2 | >1000, 30-800, 1-50, 0.001-300 |
| Thickness | um | 350±15um 230±15um 380±25um |
| TTV | um | ≤10 um |
| BOW | um | ≤40 um |
| Warp | um | ≤40 um |
| (G)STIR | um | Customer standard |
| Site Flatness-STIR | um | Customer standard |
| Edge Exclusion Zone | mm | SEMI STD or Customer Request |
| LPD's | - | ≥0.3μm, <30count or Customer Request |
| Oxygen Concentration | ppma | <1E16/cc |
| Carbon Concentration | ppma | <1E16/cc |
| RRG | - | ≤15% |
| Front Surface | - | Polished |
| Back Surface | - | Polished or Etched |
| Edge Surface Condition | SEMI STD or Customer Request | |
| Primary Flat Length | mm | SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Secondary Flat Length | mm | SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Laser mark | - | SEMI STD or Customer Request |
| Packaging | Packaged in a class 100 clean room environment, Heat-sealed plastic inner/aluminium foil outer bags, Vacuum Packing |
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| If specific requirement by customer, will adjust accordingly | ||
What is the application of silicon wafer?
Monocrystalline silicon wafer is mainly used to make semiconductor components, its detail application: it is the raw material of semiconductor silicon device, used for making high power rectifier, high power transistor, diode, switch device, etc. Monocrystalline silicon grown by Czochralski method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate and solar cell. Zone melting single crystal is mainly used in the field of high-voltage high-power controllable rectifier devices, widely used in high-power power transmission and transformation, electric locomotive, rectifier, frequency conversion, electromechanical integration, energy-saving lamp, television and other products. Epitaxial wafer are mainly used in the field of integrated circuits
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com