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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / Silicon Wafer / 4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4" /

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GaN Wafer

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SiC Wafer

 [44]

GaAs Wafer

 [23]

InP Wafer

 [21]

InAs Wafer

 [19]

InSb Wafer

 [13]

GaSb Wafer

 [19]

Germanium Wafer

 [15]

CdZnTe Wafer

 [1]

Silicon Wafer

 [65]

Glass Wafer

 [1]
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"
4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4
  • 4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4
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4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4" PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) ...
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Product Tags:
silicon on insulator wafer high precision ceramic insulators silicon wafer thickness

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