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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / Silicon Wafer / 6 Inch CZ Prime Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6" /

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GaN Wafer

 [37]

SiC Wafer

 [44]

GaAs Wafer

 [23]

InP Wafer

 [21]

InAs Wafer

 [19]

InSb Wafer

 [13]

GaSb Wafer

 [19]

Germanium Wafer

 [15]

CdZnTe Wafer

 [1]

Silicon Wafer

 [65]

Glass Wafer

 [1]
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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6 Inch CZ Prime Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6"
6 Inch CZ Prime Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6
  • 6 Inch CZ Prime Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6
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6 Inch CZ Prime Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6"​ PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide ...
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Product Tags:
qsfp h40g cu1m full ceramic zro2 si3n4 indium phosphide wafer

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