XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Add to Cart
6 Inch CZ Prime Silicon Wafer With Thermal Oxide Thickness 1um Prime Grade 6"
PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to 1200°C , SiO2 thin film layers on substrate is mainly used as dielectric material and more recently, which are integrated in MEMS (Micro Electro Mechanical Systems) devices., currently the simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen. Usually, thermal oxidation is made on both faces of a silicon wafer. To get only one side oxidized, a protection is used, then the opposite side is dissolved in BHF. As the thermal oxidation is made by run of 25 to 50 wafers and the dissolution is made wafer by wafer; double and single side silicon oxide wafers can be purchased in the same batch.
The following specification is for your reference:
• Dry SiO2 thin films from 20nm to 300 nm
• Wet thermal oxide from 50 nm up to 2 µm
• Roughness less than 3 Angstroms RMS
Quantity required: >= 25 wafers.
6inch CZ Prime Silicon Wafer With Thermal Oxide Thickness 1um Prime Grade 6"
| Type | Conduction Type | Orientation | Diameter(mm) | Resistivity(Ω•cm) |
| CZ | N&P | <100><110>&<111> | 50-300 | 1-300 |
| MCZ | N&P | <100><110>&<111> | 50-300 | 1-300 |
| Heavy-doping | N&P | <100><110>&<111> | 50-300 | 0.001-1 |
| Parameter | Unit | Value |
| Crystalline structure | - | Monocrystalline |
| Growth technique | - | CZ |
| Crystal Orientation | - | 100±0.5° |
| Conductance type | - | No requirement |
| Dopant | - | No requirement |
| Diameter | mm | 150 |
| Resistivity | Ωcm | As customer request |
| Thickness | um | 530 ± 15µm |
| TTV | um | ≤15 um |
| Warp | um | ≤35 um |
| (G)STIR | um | Customer standard |
| Site Flatness-STIR | um | Customer standard |
| Edge Exclusion Zone | mm | SEMI STD or Customer Request |
| LPD's | - | 0.3µm, <qty30 or Customer Request |
| Oxygen Concentration | ppma | <1E16/cc |
| Carbon Concentration | ppma | <1E16/cc |
| RRG | - | ≤15% |
| Front Surface | - | Polished |
| Back Surface | - | Polished |
| Edge Surface Condition | SEMI STD or Customer Request | |
| Primary Flat Length | mm | SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Secondary Flat Length | mm | SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Laser mark | - | SEMI STD or Customer Request |
| With Thermal Oxide thickness 1um | ||
| Packaging | Packaged in a class 100 clean room environment, Heat-sealed plastic inner/aluminium foil outer bags, Vacuum Packing | |
| If specific requirement by customer, will adjust accordingly | ||
1. How is Thermal Oxide Applied to Silicon Wafers?
Regularly there are three detail application:
1/Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer.
2/Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
3/Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.
2. What is Purpose of Growing Thermal Oxide Onto Silicon?
There are below five main purpose: Gate oxide; Masking material during doping; Providing protection for the conductors; Isolate devices from each other; A dielectric for a capacitor
3. What are the Factors to affect Oxide Growth?
There are following factors:Using dry oxidation (Oxygen gas) or wet oxidation steam;Pressure;Temperature;Lattice Orientation (oxide grows faster on (111) oriented wafers then (100) oriented silicon wafers;
4. Relative keywords in papers :wet oxidation,dry oxidation,thermal oxide, thermal oxide calculator, thermal oxide thickness, thermal oxide wafer, thermal oxide properties, thermal oxide growth, thermal oxide furnace, thermal oxide dielectric constant, thermal oxide growth calculator,silicon wafer thermal oxide, thermal oxide wafer, thermal oxide si wafer, thermal oxidation of silicon, thermal oxidation of silicon wafer, thermal oxidation calculator, thermal oxidation unit
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com