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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / Silicon Wafer / 3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm /

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GaN Wafer

 [37]

SiC Wafer

 [44]

GaAs Wafer

 [23]

InP Wafer

 [21]

InAs Wafer

 [19]

InSb Wafer

 [13]

GaSb Wafer

 [19]

Germanium Wafer

 [15]

CdZnTe Wafer

 [1]

Silicon Wafer

 [65]

Glass Wafer

 [1]
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm
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3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm Silicon epitaxial wafer is a layer of ...
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si wafer thickness silicon wafer thickness wafer thickness

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