XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC, Research Grade,6”Size
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 | |
| Description | Research Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (50.8 ± 0.38) mm | |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | 0.012 – 0.0028 Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° | |
| Primary flat length | 16.00 ± 1.70) mm | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | 8.00 ± 1.70 mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Usable area | ≥ 90 % | |
| Edge exclusion | 1 mm | |
sic crystal defects
Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.
Refraction Index:
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium.
Refractive index of materials varies with the wavelength. This is called dispersion; it causes the splitting of white light in prisms and rainbows, and chromatic aberration in lenses. Inopaque media, the refractive index is a complex number: while the real part describes refraction, the imaginary part accounts for absorption.
The concept of refractive index is widely used within the full electromagnetic spectrum, from x-rays to radio waves. It can also be used with wave phenomena other than light (e.g.,sound). In this case the speed of sound is used instead of that of light and a reference medium other than vacuum must be chosen.
For infrared light refractive indices can be considerably higher. Germanium is transparent in a wavelength of 589 nanometers and has a refractive index of about 4, making it an important material for infrared optics.
SiC refraction index: 2.55 (infrared; all polytypes)