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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

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Home / Products / SiC Wafer / 4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications /

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GaN Wafer

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SiC Wafer

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GaAs Wafer

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InP Wafer

 [21]

InAs Wafer

 [19]

InSb Wafer

 [13]

GaSb Wafer

 [19]

Germanium Wafer

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CdZnTe Wafer

 [1]

Silicon Wafer

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Glass Wafer

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
City:xiamen
Province/State:fujian
Country/Region:china
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4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications
4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications
  • 4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications
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4H N Type SiC , Research Grade , 6”Size,For Power Electronic Device Applications PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H ...
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Product Tags:
silicon carbide power electronics aluminium anode specification anode aluminum profile

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